symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg parameter symbol typ max t 10s 32 40 steady-state 60 75 steady-state r q jl 17 24 va w r q ja mj c 25 c/w -55 to 150 94 maximum junction-to-lead c thermal characteristics maximum junction-to-ambient a maximum junction-to-ambient a c/w c/w gate-source voltage 30 20 80 drain-source voltage t a =70c continuous drain current af t a =25c i dsm 15 parameter absolute maximum ratings t a =25c unless otherwise noted units maximum units pulsed drain current b power dissipation t a =25c p d junction and storage temperature range t a =70c 12 3.1 2.0 avalanche current b avalanche energy l=0.3mh b AO4718 30v n-channel mosfet features v ds (v) = 30v i d =15a (v gs = 10v) r ds(on) < 9m w (v gs = 10v) r ds(on) < 14m w (v gs = 4.5v) 100% uis tested 100% rg tested general description srfet tm the AO4718 uses advanced trench technology with a monolithically integrated schottky diode to provide excellent r ds(on) ,and low gate charge. this device is suitable for use as a low side fet in smps, load switching and general purpose applications. srfet tm soic-8 top view bottom view d d d d s s s g g ds srfet tm s oft r ecovery mos fet : integrated schottky diode alpha & omega semiconductor, ltd. www.aosmd.com
AO4718 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 0.1 t j =125c 10 i gss 0.1 m a v gs(th) gate threshold voltage 1.3 1.65 2.5 v i d(on) 80 a 7.3 9 t j =125c 10.3 13 10.8 14 m w g fs 43 s v sd 0.41 0.5 v i s 4 a c iss 1620 1950 pf c oss 382 pf c rss 162 pf r g 1.2 1.8 w q g (10v) 24.7 32 nc q g (4.5v) 12 16 nc q gs 4.0 nc q gd 5.6 nc t d(on) 6.3 ns t r 9.3 ns t d(off) 21.6 ns t f 5.4 ns t rr 19 23 ns q rr 36.4 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =15a, di/dt=300a/ m s drain-source breakdown voltage on state drain current i d =250ua, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =15a reverse transfer capacitance i f =15a, di/dt=300a/ m s v ds =v gs i d =250 m a maximum body-diode + schottky continuous current input capacitance output capacitance dynamic parameters m w electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current ma v ds =0v, v gs = 20v gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage v gs =4.5v, i d =12a i s =1a,v gs =0v v ds =5v, i d =15a turn-on rise time total gate charge v gs =10v, v ds =15v, i d =15a gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz turn-off delaytime v gs =10v, v ds =15v, r l =1 w , r gen =3 w turn-off fall time turn-on delaytime a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a stil l air environment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s junction to ambient thermal resistance rating. rev3: nov. 2010 alpha & omega semiconductor, ltd. www.aosmd.com
AO4718 typical electrical and thermal characteristics dynamic parameters 0 20 40 60 80 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics i d (a) 10v 4v v gs =3v 0 5 10 15 20 25 30 1 2 3 4 5 v gs (volts) figure 2: transfer characteristics i d (a) 5 7 9 11 13 15 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 vsd (volts) figure 6: body-diode characteristics is (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 30 60 90 120 150 180 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance i d =15a v gs =10v v gs =4.5v 5 10 15 20 25 30 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125 v ds =5v v gs =4.5v v gs =10v i d =15a 25c 125c i d =12a 3.5v 4.5v alpha & omega semiconductor, ltd. www.aosmd.com
AO4718 typical electrical and thermal characteristics dynamic parameters 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 10 m s 10ms 1m 0.1s dc r ds(on) limited 100 m t j(max) =150c t a =25c 10s 1s 0 2 4 6 8 10 0 5 10 15 20 25 30 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =15v i d =15a 0 20 40 60 80 100 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure10: single pulse power rating junction-to- ambient (note e) power (w) t j(max) =150c t a =25c 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note e) z q qq q ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =75c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse alpha & omega semiconductor, ltd. www.aosmd.com
AO4718 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & w aveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & w aveform s t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclam ped inductive switching (uis) test circuit & w aveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & w aveform s vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr alpha & omega semiconductor, ltd. www.aosmd.com
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